Publisher: Edp Sciences
E-ISSN: 0035-1687|13|12|591-596
ISSN: 0035-1687
Source: Revue de Physique Appliquée (Paris), Vol.13, Iss.12, 1978-12, pp. : 591-596
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
NOVEL CALCULATIONS IN THE FIELD OF ACCURATE ANALYTICAL MOS TRANSISTOR MODELLING
Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. :
Magnetic-field effect in MOS transistor with injecting source
Revue de Physique Appliquée (Paris), Vol. 18, Iss. 2, 1983-02 ,pp. :
Le transistor-thyristor métal-oxyde-semiconducteur (T2 MOS)
Revue de Physique Appliquée (Paris), Vol. 20, Iss. 8, 1985-08 ,pp. :
Characterization of interface traps on MOS transistor submicronic by the three level charge pumping
Le Journal de Physique IV, Vol. 124, Iss. issue, 2005-05 ,pp. :