Publisher： Edp Sciences
E-ISSN： 0035-1687|23|5|739-746
ISSN： 0035-1687
Source： Revue de Physique Appliquée (Paris), Vol.23, Iss.5, 1988-05, pp. : 739-746
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Revue de Physique Appliquée (Paris), Vol. 23, Iss. 5, 1988-05 ,pp. :
Access to resources
Recommend
On quantitative mapping of EL2 concentration in semi-insulating GaAs wafers
Journal de Physique III, Vol. 1, Iss. 9, 1991-09 ,pp. :
The EL2 center in GaAs: symmetry and metastability
Journal de Physique I, Vol. 1, Iss. 10, 1991-10 ,pp. :
EL2-related studies in irradiated and implanted GaAs
Revue de Physique Appliquée (Paris), Vol. 23, Iss. 5, 1988-05 ,pp. :
Recent developments in the study of the EL2 defect in GaAs
Revue de Physique Appliquée (Paris), Vol. 23, Iss. 5, 1988-05 ,pp. :