Publisher： Edp Sciences
E-ISSN： 0035-1687|20|1|29-35
ISSN： 0035-1687
Source： Revue de Physique Appliquée (Paris), Vol.20, Iss.1, 1985-01, pp. : 29-35
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
EBIC AND DLTS MEASUREMENTS OF SI-AND POLYCRYSTALLINE SILICON
Le Journal de Physique Colloques, Vol. 49, Iss. C5, 1988-10 ,pp. :
Access to resources
Recommend
On the amorphous silicon on crystalline silicon heterojunctions
Revue de Physique Appliquée (Paris), Vol. 16, Iss. 2, 1981-02 ,pp. :
DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON
Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. :
HEATING OF CRYSTALLINE AND AMORPHOUS SILICON BY C-SWITCHED LASER RADIATION
Le Journal de Physique Colloques, Vol. 41, Iss. C4, 1980-05 ,pp. :
Dominant structural defects in amorphous silicon
Journal of Physics: Condensed Matter, Vol. 27, Iss. 34, 2015-01 ,pp. :