Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15

E-ISSN： 0035-1687|24|8|795-802

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.24, Iss.8, 1989-08, pp. : 795-802

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