Publisher: Edp Sciences
E-ISSN: 0035-1687|23|5|779-791
ISSN: 0035-1687
Source: Revue de Physique Appliquée (Paris), Vol.23, Iss.5, 1988-05, pp. : 779-791
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
EL2 distribution in LEC GaAs ingots and wafers
Revue de Physique Appliquée (Paris), Vol. 23, Iss. 5, 1988-05 ,pp. :
The EL2 center in GaAs: symmetry and metastability
Journal de Physique I, Vol. 1, Iss. 10, 1991-10 ,pp. :
EL2-related studies in irradiated and implanted GaAs
Revue de Physique Appliquée (Paris), Vol. 23, Iss. 5, 1988-05 ,pp. :
Revue de Physique Appliquée (Paris), Vol. 23, Iss. 5, 1988-05 ,pp. :
Recent developments in the study of the EL2 defect in GaAs
Revue de Physique Appliquée (Paris), Vol. 23, Iss. 5, 1988-05 ,pp. :