COEXISTENCE OF INSULATING AND METALLIC ELECTRONIC PHASES IN DOPED SEMICONDUCTORS AT LOW TEMPERATURE : ELEMENTS OF A CONCENTRATION TEMPERATURE DIAGRAM

Publisher： Edp Sciences

E-ISSN： 0449-1947|39|C6|C6-1074-C6-1076

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.39, Iss.C6, 1978-08, pp. : C6-1074-C6-1076

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