THE LOCAL SPIN-DENSITY-FUNCTIONAL METHOD : APPLICATION TO THE METAL-INSULATOR TRANSITION IN DOPED SEMICONDUCTORS

Publisher： Edp Sciences

E-ISSN： 0449-1947|41|C5|C5-317-C5-323

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.41, Iss.C5, 1980-07, pp. : C5-317-C5-323

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

THE INSULATING SIDE OF THE METAL-INSULATOR TRANSITION IN DOPED SEMICONDUCTORS

By  

Le Journal de Physique Colloques, Vol. 37, Iss. C4, 1976-10 ,pp. : C4-323-C4-327

Edp Sciences

Access to resources Recommend Favorite

Influence of donor-donor interaction on the metal-insulator transition in doped semiconductors

By Mikheev V.  

Physics of the Solid State, Vol. 39, Iss. 11, 1997-11 ,pp. : 1774-1778

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Susceptibility of local magnetic moments in phosphorous-doped siliconnear the metal-insulator transition

By Schlager H. G.   H. v. Löhneysen H. G.  

EPL (EUROPHYSICS LETTERS), Vol. 41, Iss. 5, 2010-03 ,pp. : 584-666

Edp Sciences

Access to resources Recommend Favorite

Pseudogap and metal-insulator transitions in doped semiconductors

By Agafonov A.   Manykin É.  

Journal of Experimental and Theoretical Physics, Vol. 102, Iss. 1, 2006-01 ,pp. : 160-172

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Metal-insulator transition by suppression of spin fluctuations

By  

EPL (EUROPHYSICS LETTERS), Vol. 85, Iss. 3, 2009-02 ,pp. : 37006-37006

Edp Sciences

Access to resources Recommend Favorite