ABSORPTION OF BALLISTIC PHONONS BY THE 2D ELECTRON GAS IN A Si MOSFET

Publisher： Edp Sciences

E-ISSN： 0449-1947|42|C6|C6-308-C6-310

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.42, Iss.C6, 1981-12, pp. : C6-308-C6-310

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities

By Shlimak I.   Butenko A.   Golosov D. I.   Friedland K.-J.   Kravchenko S. V.  

EPL (EUROPHYSICS LETTERS), Vol. 97, Iss. 3, 2012-02 ,pp. : 37002-37002

Edp Sciences

Access to resources Recommend Favorite

Electron transport in a slot-gate Si MOSFET

By  

EPL (EUROPHYSICS LETTERS), Vol. 82, Iss. 4, 2008-05 ,pp. : 47001-47001

Edp Sciences

Access to resources Recommend Favorite

Ballistic electron emission microscopy of the Au-Si (100) interface

By  

Journal de Physique III, Vol. 3, Iss. 12, 1993-12 ,pp. : 2211-2220

Edp Sciences

Access to resources Recommend Favorite

Ballistic thermopower of suspended semiconductor Hall bars with two dimensional electron gas

By  

Journal of Physics: Conference Series , Vol. 643, Iss. 1, 2015-11 ,pp. : 396-400

IOP Publishing

Access to resources Recommend Favorite

Magnetooptical interference effects in a structure featuring a 2D electron gas

By Popov V.   Teperik T.  

Technical Physics Letters, Vol. 26, Iss. 12, 2000-12 ,pp. : 1067-1069

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite