SPECTROSCOPIC ELLIPSOMETRY AND RAMAN SCATTERING ANALYSIS OF Be SHALLOW IMPLANTATION IN GaAs

Publisher： Edp Sciences

E-ISSN： 0449-1947|44|C10|C10-261-C10-265

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.44, Iss.C10, 1983-12, pp. : C10-261-C10-265

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