CHARACTERIZATION OF STRESS FIELD AND ELECTRIC ACTIVITY OF DISLOCATIONS IN SEMICONDUCTORS

Publisher： Edp Sciences

E-ISSN： 0449-1947|44|C4|C4-169-C4-181

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.44, Iss.C4, 1983-09, pp. : C4-169-C4-181

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

DISLOCATIONS IN SEMICONDUCTORS

By  

Le Journal de Physique Colloques, Vol. 27, Iss. C3, 1966-07 ,pp. : C3-30-C3-38

Edp Sciences

Access to resources Recommend Favorite

Influence of the Electric Field on Edge Dislocations in Smectics

By  

Journal de Physique II, Vol. 5, Iss. 10, 1995-10 ,pp. : 1525-1532

Edp Sciences

Access to resources Recommend Favorite

Identification of Defects in Semiconductors via their Electric Field Gradients

By Wichert Thomas   Lany Stephan  

Hyperfine Interactions, Vol. 136, Iss. 3-8, 2001-11 ,pp. : 453-465

Springer Publishing Company

Access to resources Recommend Favorite

EXPERIMENTAL STUDY ON THE ELECTRIC FIELD OF DISLOCATIONS IN COLOURED ALKALI HALIDE CRYSTALS

By  

Le Journal de Physique Colloques, Vol. 34, Iss. C9, 1973-11 ,pp. : C9-261-C9-264

Edp Sciences

Access to resources Recommend Favorite

CATHODOLUMINESCENCE STUDIES OF DISLOCATIONS IN SEMICONDUCTORS

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C4, 1983-09 ,pp. : C4-277-C4-287

Edp Sciences

Access to resources Recommend Favorite