LUMINESCENCE IN a-Si:H

Publisher： Edp Sciences

E-ISSN： 0449-1947|42|C4|C4-283-C4-291

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.42, Iss.C4, 1981-10, pp. : C4-283-C4-291

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

FIELD EFFECT STUDIES ON a-Si:H FILMS

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-523-C4-526

Edp Sciences

Access to resources Recommend Favorite

PHOTOVOLTAIC EFFECT IN INTERSTITIALLY DOPED a-Si:H

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-527-C4-530

Edp Sciences

Access to resources Recommend Favorite

AC FIELD AND FREQUENCY DEPENDENCE OF a-Si:H CONDUCTIVITY AT 4,2 K

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-147-C4-150

Edp Sciences

Access to resources Recommend Favorite

PHOTOCONDUCTIVITY AND RELATED MEASUREMENTS OF THE CONDUCTION BAND TAIL IN a-Si:H

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-575-C4-578

Edp Sciences

Access to resources Recommend Favorite

PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED a-Si:H

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-375-C4-378

Edp Sciences

Access to resources Recommend Favorite