GROWTH OF PLANAR DOPED BARRIER STRUCTURES IN GALLIUM ARSENIDE BY MOLECULAR BEAM EPITAXY

E-ISSN： 0449-1947|43|C5|C5-321-C5-322

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.43, Iss.C5, 1982-12, pp. : C5-321-C5-322

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