SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERISED EBIC SYSTEM

Publisher： Edp Sciences

E-ISSN： 0449-1947|44|C4|C4-445-C4-450

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.44, Iss.C4, 1983-09, pp. : C4-445-C4-450

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

SOME EXAMPLES OF QUANTITATIVE E.B.I.C. MODE FOR THE STUDY OF THE ELECTRICAL PROPERTIES OF DISLOCATIONS IN SEMICONDUCTOR DEVICES

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C4, 1983-09 ,pp. : C4-465-C4-468

Edp Sciences

Access to resources Recommend Favorite

On the temperature dependence of the EBIC contrast of dislocations in silicon

By  

Journal de Physique, Vol. 47, Iss. 2, 1986-02 ,pp. : 171-173

Edp Sciences

Access to resources Recommend Favorite

EBIC MEASUREMENTS OF ANNEALED SILICON BICRYSTALS

By  

Le Journal de Physique Colloques, Vol. 50, Iss. C6, 1989-06 ,pp. : C6-157-C6-157

Edp Sciences

Access to resources Recommend Favorite

EBIC and conductance measurements in poly- and bicrystalline silicon

By  

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 7, 1987-07 ,pp. : 597-601

Edp Sciences

Access to resources Recommend Favorite

EBIC AND DLTS MEASUREMENTS OF SI-AND POLYCRYSTALLINE SILICON

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C5, 1988-10 ,pp. : C5-665-C5-670

Edp Sciences

Access to resources Recommend Favorite