ELECTRICAL CHARACTERISTICS OF Au SCHOTTKY CONTACTS EVAPORATED ON PULSED ELECTRON BEAM ANNEALED N-TYPE (100) SILICON

Publisher： Edp Sciences

E-ISSN： 0449-1947|44|C5|C5-297-C5-301

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.44, Iss.C5, 1983-10, pp. : C5-297-C5-301

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Laser and furnace annealed Au, Ag and Al ohmic contacts on n + -GaAs

By  

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 9, 1987-09 ,pp. : 967-969

Edp Sciences

Access to resources Recommend Favorite

Electrical characteristics of Au/Ti/n-GaAs contacts over a wide measurement temperature range

By Biyikli Necmi   Karabulut Abdulkerim   Efeolu Hasan   Guzeldir Betul   Turut Abdulmecit  

Physica Scripta, Vol. 89, Iss. 9, 2014-09 ,pp. : 95804-95810

IOP Publishing

Access to resources Recommend Favorite

PULSED ELECTRON BEAM ANNEALING OF As AND B IMPLANTED SILICON

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C5, 1983-10 ,pp. : C5-209-C5-214

Edp Sciences

Access to resources Recommend Favorite

Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP

By Devi V. Lakshmi   Jyothi I.   Reddy V. Rajagopal  

Canadian Journal of Physics, Vol. 90, Iss. 1, 2012-01 ,pp. : 73-81

NRC Research Press

Access to resources Recommend Favorite

Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide

By  

Journal of Physics: Conference Series , Vol. 100, Iss. 4, 2008-03 ,pp. : 9-13

IOP Publishing

Access to resources Recommend Favorite