LATTICE TEMPERATURE OF GaAs AND Si DURING PULSED LASER ANNEALING

Publisher： Edp Sciences

E-ISSN： 0449-1947|44|C5|C5-129-C5-129

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.44, Iss.C5, 1983-10, pp. : C5-129-C5-129

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

PULSED-LASER ATOM-PROBE STUDY OF Si, GaAs AND GaP

By  

Le Journal de Physique Colloques, Vol. 47, Iss. C2, 1986-03 ,pp. : C2-303-C2-308

Edp Sciences

Access to resources Recommend Favorite

PICOSECOND LASER ANNEALING OF IMPLANTED Si AND GaAs : A COMPARATIVE STUDY WITH A RAMAN MICROPROBE

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C5, 1983-10 ,pp. : C5-187-C5-191

Edp Sciences

Access to resources Recommend Favorite

NATIVE OXIDES BEHAVIOR DURING PULSED LASER IRRADIATION OF GaAs

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C5, 1983-10 ,pp. : C5-179-C5-185

Edp Sciences

Access to resources Recommend Favorite

DENSE-PLASMA DYNAMICS DURING PULSED LASER ANNEALING

By  

Le Journal de Physique Colloques, Vol. 41, Iss. C4, 1980-05 ,pp. : C4-7-C4-13

Edp Sciences

Access to resources Recommend Favorite

Temperature dependence of pulsed polariton lasing in a GaAs microcavity

By  

New Journal of Physics, Vol. 14, Iss. 8, 2012-08 ,pp. : 238-249

IOP Publishing

Access to resources Recommend Favorite