ELECTRONIC PROPERTIES OF Si-INVERSION LAYER WITH MODULATED BAND STRUCTURE INDUCED BY PERIODIC ELECTRON BEAM IRRADIATION OF GATE OXIDE

Publisher： Edp Sciences

E-ISSN： 0449-1947|48|C5|C5-195-C5-198

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.48, Iss.C5, 1987-11, pp. : C5-195-C5-198

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