TUNNELING FROM QUASI 2D ELECTRONIC STATES INTO CONTINUUM- AND BOUND STATES IN GaAs/GaAlAs-HETEROSTRUCTURES

Publisher: Edp Sciences

E-ISSN: 0449-1947|48|C5|C5-479-C5-482

ISSN: 0449-1947

Source: Le Journal de Physique Colloques, Vol.48, Iss.C5, 1987-11, pp. : C5-479-C5-482

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