DOUBLE-ELECTRON EXCITATION AT THE Si K-EDGE OF AMORPHOUS SILICON
Publisher: Edp Sciences
E-ISSN: 0449-1947|48|C9|C9-961-C9-964
ISSN: 0449-1947
Source: Le Journal de Physique Colloques, Vol.48, Iss.C9, 1987-12, pp. : C9-961-C9-964
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