THEORETICAL STUDIES OF THE ATOMIC AND ELECTRONIC STRUCTURES OF GRAIN BOUNDARIES IN SILICON AND SILICON-CARBIDE

Publisher: Edp Sciences

E-ISSN: 0449-1947|51|C1|C1-209-C1-214

ISSN: 0449-1947

Source: Le Journal de Physique Colloques, Vol.51, Iss.C1, 1990-01, pp. : C1-209-C1-214

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next