ULTRASONIC ATTENUATION OF HEAVILY DOPED SEMICONDUCTORS IN THE WEAKLY LOCALIZED REGIME

E-ISSN： 0449-1947|46|C10|C10-533-C10-536

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.46, Iss.C10, 1985-12, pp. : C10-533-C10-536

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