USE OF A GATE DELAY EXPRESSION TO COMPARE SELF-ALIGNED SILICON BIPOLAR AND AlGaAs/GaAs HETEROJUNCTION BIPOLAR TECHNOLOGIES

Publisher: Edp Sciences

E-ISSN: 0449-1947|49|C4|C4-571-C4-574

ISSN: 0449-1947

Source: Le Journal de Physique Colloques, Vol.49, Iss.C4, 1988-09, pp. : C4-571-C4-574

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next