DLTS analysis of high resistive edge termination technique‐induced defects in GaN‐based Schottky barrier diodes

Publisher: John Wiley & Sons Inc

E-ISSN: 1862-6319|213|9|2364-2370

ISSN: 1862-6300

Source: PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.213, Iss.9, 2016-09, pp. : 2364-2370

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Abstract