Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

Publisher: Edp Sciences

E-ISSN: 2261-236x|78|issue|01019-01019

ISSN: 2261-236x

Source: MATEC Web of conference, Vol.78, Iss.issue, 2016-10, pp. : 01019-01019

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Abstract