Author： Prêle D.
Publisher： Edp Sciences
E-ISSN： 1638-1963|37|issue|141-148
ISSN： 1633-4760
Source： EAS Publications Series, Vol.37, Iss.issue, 2009-06, pp. : 141-148
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Operation of SiGe bipolar technology at cryogenic temperatures
Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. :
Access to resources
Recommend
Numerical simulation of SiGe HBT's at cryogenic temperatures
Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. :
SiGe Hetero FETs on silicon at cryogenic temperature
Le Journal de Physique IV, Vol. 12, Iss. 3, 2002-05 ,pp. :
High-injection barrier effects in SiGe HBTs operating at cryogenic temperatures
Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. :
Access to resources