La transition fragile-ductile de 4H-SiC monocristallin

E-ISSN： 1764-7177|106|issue|53-62

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.106, Iss.issue, 2003-03, pp. : 53-62

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Étude de la transition fragile-ductile d'un tungstène

Le Journal de Physique IV, Vol. 07, Iss. C3, 1997-08 ,pp. : C3-879-C3-884

Edp Sciences

Access to resources Recommend Favorite

Electronic structure and charge transfer in 3C- and 4H-SiC

New Journal of Physics, Vol. 2, Iss. 1, 2000-07 ,pp. : 207-218

IOP Publishing

Access to resources Recommend Favorite

The fabrication and characterization of 4H-SiC power UMOSFETs

By Qing-Wen Song Yu-Ming Zhang Ji-Sheng Han Tanner Philip Dimitrijev Sima Yi-Men Zhang Xiao-Yan Tang Hui Guo

Chinese Physics B, Vol. 22, Iss. 2, 2013-02 ,pp. : 27302-27304

IOP Publishing

Access to resources Recommend Favorite

Effect of additional silicon on titanium/4H-SiC contacts properties

By Yong-Ping Zhang Zhi-Zhan Chen Wu-Yue Lu Jia-Hui Tan Yue Cheng Wang-Zhou Shi

Chinese Physics B, Vol. 23, Iss. 5, 2014-05 ,pp. : 57303-57307

IOP Publishing

Access to resources Recommend Favorite

Radiation-stimulated photoluminescence in electron irradiated 4H-SiC

Journal of Physics D: Applied Physics, Vol. 48, Iss. 48, 2015-12 ,pp. : 485106-485110

IOP Publishing

Access to resources Recommend Favorite