Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

E-ISSN： 1764-7177|132|issue|365-368

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.132, Iss.issue, 2006-03, pp. : 365-368

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