Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate

Author： Wu YewChung Sermon   Isabel A. Panimaya Selvi   Zheng Jian-Hsuan   Lin Bo-Wen   Li Jhen-Hong   Lin Chia-Chen  

Publisher： MDPI

E-ISSN： 1996-1944|8|4|1993-1999

ISSN： 1996-1944

Source： Materials, Vol.8, Iss.4, 2015-04, pp. : 1993-1999

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Precise Temperature Mapping of GaN-Based LEDs by Quantitative Infrared Micro-Thermography

By Chang Ki Soo   Yang Sun Choel   Kim Jae-Young   Kook Myung Ho   Ryu Seon Young   Choi Hae Young   Kim Geon Hee  

Sensors, Vol. 12, Iss. 4, 2012-04 ,pp. : 4648-4660

MDPI

Access to resources Recommend Favorite

GaN-Based Laser Wireless Power Transfer System

By De Santi Carlo   Meneghini Matteo   Caria Alessandro   Dogmus Ezgi   Zegaoui Malek   Medjdoub Farid   Kalinic Boris   Cesca Tiziana   Meneghesso Gaudenzio   Zanoni Enrico  

Materials, Vol. 11, Iss. 1, 2018-01 ,pp. : 153-153

MDPI

Access to resources Recommend Favorite

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

By Ryu Han-Youl  

Crystals, Vol. 8, Iss. 1, 2018-01 ,pp. : 27-27

MDPI

Access to resources Recommend Favorite

High-Quality GaSe Single Crystal Grown by the Bridgman Method

By Wang Tao   Li Jie   Zhao Qinghua   Yin Ziang   Zhang Yinghan   Chen Bingqi   Xie Yong   Jie Wanqi  

Materials, Vol. 11, Iss. 2, 2018-01 ,pp. : 186-186

MDPI

Access to resources Recommend Favorite

A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology †

By Padmanabhan Preethi   Hancock Bruce   Nikzad Shouleh   Bell L. Douglas   Kroep Kees   Charbon Edoardo  

Sensors, Vol. 18, Iss. 2, 2018-02 ,pp. : 449-449

MDPI

Access to resources Recommend Favorite