A Comparative Numerical Study of Junctionless and p-i-n Tunneling Carbon Nanotube Field Effect Transistor

E-ISSN： 1661-9897|2017|45|55-75

ISSN： 1662-5250

Source： Journal of Nano Research, Vol.2017, Iss.45, 2017-02, pp. : 55-75

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of Device Parameters on Carbon Nanotube Field Effect Transistor in Nanometer Regime

Journal of Nano Research, Vol. 2015, Iss. 36, 2016-01 ,pp. : 64-75

Trans Tech Publications

Access to resources Recommend Favorite

A comprehensive analytical study of electrical properties of carbon nanotube field‐effect transistor for future nanotechnology

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS, Vol. 31, Iss. 1, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

n-type and p-type double-walled carbon nanotube field-effect transistors based on charge-transfer modulation

By Li Y.F. Hatakeyama R. Kaneko T.

Applied Physics A, Vol. 88, Iss. 4, 2007-09 ,pp. : 745-749

Springer Publishing Company

Access to resources Recommend Favorite

Sensing mechanism of metal‐decorated single‐walled carbon nanotube field effect transistor sensors

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 246, Iss. 11‐12, 2009-12 ,pp. : 2824-2827

John Wiley & Sons Inc

Access to resources Recommend Favorite

A Comparative Study of Field Emission From Semiconducting and Metallic Single‐Walled Carbon Nanotube Planar Emitters

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 255, Iss. 1, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite