Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2017|897|226-229
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 226-229
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
A Surprising Result: “Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Access to resources
Recommend
Optical Characterization of p-Type 4H-SiC Epilayers
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Dislocation Characterization in 4H-SiC Crystals
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :