Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2017|897|423-426
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 423-426
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :