Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2017|897|75-78
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 75-78
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Access to resources
Recommend
Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Power-Efficient Phase Change Memory Using Silicon Carbide as a Buffer Layer
Materials Science Forum, Vol. 2017, Iss. 898, 2017-07 ,pp. :
Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :