The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2017|897|167-170

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 167-170

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Abstract

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