3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2017|897|493-496

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 493-496

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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