Engineering the Electronic and Magnetic Properties of Sc₂CF₂ MXene Material through Vacancy Doping and Lattice Straining

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2017|900|61-64

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.900, 2017-08, pp. : 61-64

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