Thermal Growth of Graphene: A Review

Publisher： MDPI

E-ISSN： 2079-6412|8|1|40-40

ISSN： 2079-6412

Source： Coatings, Vol.8, Iss.1, 2018-01, pp. : 40-40

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

A common belief proposed by Peierls and Landau that two-dimensional material cannot exist freely in a three-dimensional world has been proved false when graphene was first synthesized in 2004. Graphene, which is the base structure of other carbon materials, has drawn much attention of scholars and researchers due to its extraordinary electrical, mechanical and thermal properties. Moreover, methods for its synthesis have developed greatly in recent years. This review focuses on the mechanism of the thermal growth method and the different synthesis methods, where epitaxial growth, chemical vapor deposition, plasma-enhanced chemical vapor deposition and combustion are discussed in detail based on this mechanism. Meanwhile, to improve the quality and control the number of graphene layers, the latest research progress in optimizing growth parameters and developmental technologies has been summarized. The strategies for synthesizing high-quality and large-scale graphene are proposed and an outlook on the future synthesis direction is also provided.