Author： Ferrari Claudio Ghica Corneliu Rotunno Enzo
Publisher： MDPI
E-ISSN： 2073-4352|8|2|67-67
ISSN： 2073-4352
Source： Crystals, Vol.8, Iss.2, 2018-01, pp. : 67-67
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Abstract
We have analyzed by transmission electron microscopy silicon and GaAs crystals polished with sandpapers of different grain size. The surface damage induced a crystal permanent convex curvature with a radius of the order of a few meters. The curvature is due to a compressive strain generated in the damaged zone of the sample. Contrary to what was reported in the literature, the only defects detected by transmission electron microscopy were dislocations penetrating a few microns from the surface. Assuming the surface damage as a kind of continuous indentation, a simple model able to explain the observed compressive strain is given.
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