Effect of edge vacancies on performance of planar graphene tunnel field-effect transistor

Author: Glebov A. A.   Katkov V. L.   Osipov V. A.  

Publisher: Edp Sciences

E-ISSN: 1286-4854|118|2|27003-27003

ISSN: 0295-5075

Source: EPL (EUROPHYSICS LETTERS), Vol.118, Iss.2, 2017-06, pp. : 27003-27003

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Abstract