Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

Author: Abdul Halim N. Syafira  

Publisher: Edp Sciences

E-ISSN: 2100-014x|162|issue|01037-01037

ISSN: 2100-014x

Source: EPJ Web of Conference, Vol.162, Iss.issue, 2017-11, pp. : 01037-01037

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content