Gate recess study for high thermal stability pHEMT devices

Author： Isa M. Mohamad  

Publisher： Edp Sciences

E-ISSN： 2100-014x|162|issue|01047-01047

ISSN： 2100-014x

Source： EPJ Web of Conference, Vol.162, Iss.issue, 2017-11, pp. : 01047-01047

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