High-precision mass measurements for the rp-process at JYFLTRAP

By  

EPJ Web of Conference, Vol. 165, Iss. issue, 2018-01 ,pp. : 01008-01008

Edp Sciences

Access to resources Recommend Favorite

Growth of AlGaN Film on Si (111) Substrate

By  

MATEC Web of conference, Vol. 61, Iss. issue, 2016-06 ,pp. : 06016-06016

Edp Sciences

Access to resources Recommend Favorite

UV and IR laser induced ablation of Al₂O₃/SiN:H and a-Si:H/SiN:H

By Schutz-Kuchly T.   Slaoui A.   Zelgowski J.   Bahouka A.   Pawlik M.   Vilcot J.-P.   Delbos E.   Bouttemy M.   Cabal R.  

EPJ Photovoltaics, Vol. 5, Iss. issue, 2014-01 ,pp. : 55201-55201

Edp Sciences

Access to resources Recommend Favorite

High performance AlGaN/GaN power switch with Si₃N₄ insulation

By Lin Defeng   Wang Xiaoliang   Xiao Hongling   Kang He   Wang Cuimei   Jiang Lijuan   Feng Chun   Chen Hong   Deng Qingwen   Bi Yang   Zhang Jingwen   Hou Xun  

EPJ Applied Physics (The), Vol. 61, Iss. 1, 2013-01 ,pp. : 10101-10101

Edp Sciences

Access to resources Recommend Favorite

Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates

By Ilgaz A.   Gökden S.   Tülek R.   Teke A.   Özçelik S.   Özbay E.  

EPJ Applied Physics (The), Vol. 55, Iss. 3, 2011-08 ,pp. : 30102-30102

Edp Sciences

Access to resources Recommend Favorite