Electrical Characterization of Integrated 2-Input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiС-Technology

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|958-961

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 958-961

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 482-485

Trans Tech Publications

Access to resources Recommend Favorite

Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 473-476

Trans Tech Publications

Access to resources Recommend Favorite

Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 697-702

Trans Tech Publications

Access to resources Recommend Favorite

Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 645-648

Trans Tech Publications

Access to resources Recommend Favorite

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 854-857

Trans Tech Publications

Access to resources Recommend Favorite