Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2018|924|196-199
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 196-199
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Access to resources
Recommend
Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Practical Design of 4H-SiC Superjunction Devices in the Presence of Charge Imbalance
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :