Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2018|924|128-131
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 128-131
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Breakdown Field Model for 3C-SiC Power Device Simulations
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Access to resources
Recommend
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Influence of Aluminum Incorporation on Mechanical Properties of 3C-SiC Epilayers
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Comparison of 3C-SiC and 4H-SiC Power MOSFETs
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Optical and Microstructural Investigation of Heavy B-Doping Effects in Sublimation-Grown 3C-SiC
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :