Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2018|924|895-900

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 895-900

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract