Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (gt;12MeV) of Al⁺ and B⁺

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Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 573-576

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Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications

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Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 597-600

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About the Electrical Activation of 1×10²⁰ cm^-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

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Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 333-338

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Design and Manufacturing of 1200V SiC JBS Diodes with Low On-State Voltage Drop and Reverse Blocking Leakage Current

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Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 613-616

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Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

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Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 593-596

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