Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2018|924|671-675

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 671-675

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract