Publisher： Edp Sciences
E-ISSN： 2100-014x|185|issue|06007-06007
ISSN： 2100-014x
Source： EPJ Web of Conference, Vol.185, Iss.issue, 2018-07, pp. : 06007-06007
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Abstract
We have studied magnetoresistance and Hall effect of GaAs/InxGa1−xAs quantum wells with remote Mn impurity. Temperature and magnetic field dependencies of samples resistivity indicate several effects related to the magnetic subsystem. Shubnikov - de Haas oscillations indicate the presence of several types of regions in conduction channel with significantly different hole mobilities. We discussed the impact of magnetic impurities on quantum corrections to conductivity by comparing our results with the data for similar non-magnetic structures. Our results suggest that the presence of Mn atoms leads to the damping of quantum corrections in in the investigated structures.
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