Publisher： Trans Tech Publications
E-ISSN： 1662-9795|2018|777|121-125
ISSN： 1013-9826
Source： Key Engineering Materials, Vol.2018, Iss.777, 2018-10, pp. : 121-125
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Photoluminescence (PL) properties and carrier transport in a GaAs/AlAs asymmetric quintuple-quantum well superlattice (AQQW-SL) were investigated. Since AQQWs are separated by very thin AlAs barriers, various carrier transport phenomena are expected due to the strong coupling of wave functions between the Γ states in the GaAs QWs and the X states in the AlAs barriers. A 20-period AQQW was embedded in the i-layer of a pin diode. A PL signal between the ground Γ and the heavy hole (hh) states was observed around 740 nm. However, another PL branch was observed at about 665 nm around 6 V. Based on the numerical calculation of the Γ and X wave functions, the electron transport from the X state in the thick AlAs barrier (X11) to the Γ state in the third QW (Γ31) occurs at 6.1 V. Thus, a PL signal at 665 nm can be attributed to the recombination between Γ31 and hh11.
Related content
First-Principles Study of Electronic Structure, Optical Properties and LO-TO Splitting of GaP
Key Engineering Materials, Vol. 2018, Iss. 787, 2018-12 ,pp. :
Access to resources
Recommend
By Nomoto Junichi Inaba Katsuhiko Kobayashi Shintaro Watanabe Takeshi Makino Hisao Yamamoto Tetsuya
Materials, Vol. 10, Iss. 8, 2017-08 ,pp. :
Access to resources
Analysis of Junction Temperature of AlGaInP LED
Key Engineering Materials, Vol. 2018, Iss. 777, 2018-10 ,pp. :