Proposal and Demonstration of GaN-Based Normally-Off Vertical Field-Effect Transistor with a Design of Back Current Block Layer

Publisher： Trans Tech Publications

E-ISSN： 1662-9795|2018|787|69-73

ISSN： 1013-9826

Source： Key Engineering Materials, Vol.2018, Iss.787, 2018-12, pp. : 69-73

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