Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD

Publisher： IOP Publishing

E-ISSN： 1741-4199|23|12|128102-128106

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.12, 2014-12, pp. : 128102-128106

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